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Journal Articles

Impact of nitridation on the reliability of 4H-SiC(11$$bar{2}$$0) MOS devices

Nakanuma, Takato*; Kobayashi, Takuma*; Hosoi, Takuji*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 15(4), p.041002_1 - 041002_4, 2022/04

https://doi.org/10.35848/1882-0786/ac5ace
 Times Cited Count：5 Percentile：48.5(Physics, Applied)

The leakage current and flat-band voltage (VFB) instability of NO-nitrided SiC (11$$bar{2}$$0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler-Nordheim (F-N) current by about 1 MVcm$$^{-1}$$, leading to pronounced leakage current. Synchrotron X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO$$_{2}$$/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the VFB instability of nitrided a-face MOS devices against electron and hole injection.

Journal Articles

Low-energy proton irradiation effects on GaAs/Si solar cell

Chandrasekaran, N.*; Soga, Tetsuo*; Inuzuka, Yosuke*; Taguchi, Hironori*; Imaizumi, Mitsuru*; Oshima, Takeshi; Jimbo, Takashi*

Japanese Journal of Applied Physics, 43(10A), p.L1302 - L1304, 2004/10

https://doi.org/10.1143/JJAP.43.L1302
 Times Cited Count：6 Percentile：27.83(Physics, Applied)

no abstracts in English

Journal Articles

Change in the electrical characteristics of p-channel 6H-SiC MOSFETs by $$gamma$$-ray irradiation

Oshima, Takeshi; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10

no abstracts in English

Journal Articles

Impurity doping into SiC semiconductor by means of ion implantation

Ito, Hisayoshi; Oshima, Takeshi

Hyomen Kagaku, 21(12), p.778 - 783, 2000/12

https://doi.org/10.1380/jsssj.21.778

no abstracts in English

Journal Articles

Electrical conductivity change in single crystal Al$$_{2}$$O$$_{3}$$ and MgO under neutron and $$gamma$$-ray irradiation

Tanifuji, Takaaki; Katano, Yoshio; ; Noda, Kenji

Journal of Nuclear Materials, 253, p.156 - 166, 1998/00

https://doi.org/10.1016/S0022-3115(97)00310-3
 Times Cited Count：5 Percentile：44.27(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Fabrication of SiC devices by ion implantation; Technique and evaluation

Oshima, Takeshi

Nyu Seramikkusu, 10(5), p.20 - 27, 1997/05

https://ci.nii.ac.jp/naid/40004842245

no abstracts in English

Journal Articles

R&D-RC structure using electrical insulated reinforcing bar, part 13; Primary test of electrical concrete crack monitoring method

Akutsu, Yoichi; Okawa, Yoshinao; Suzuki, Hideyuki; *; *; *

Nihon Kenchiku Gakkai Taikai Gakujutsu Koen Kogaishu, 0, p.1337 - 1338, 1995/00

no abstracts in English

Journal Articles

Electrical and mechanical properties of coaxial cable for use under high temperature and radioactive conditions, 2

Seguchi, Tadao; Yagi, Toshiaki; *; *; *; *; Nakamura, Hiroshi*; *; *

DEI-94-92, 0, p.37 - 45, 1994/12

no abstracts in English

Journal Articles

High dose irradiation effects of aromatic polymer materials

*; *; Morita, Yosuke; Yagi, Toshiaki; Seguchi, Tadao

Denki Gakkai Yuden, Zetsuen Zairyo Kenkyukai Shiryo; DEI-94-91, 0, p.29 - 36, 1994/12

no abstracts in English

Journal Articles

Radiation resistivity of insulating varnish

Morita, Yosuke; Seguchi, Tadao; Yoshida, Kenzo; *; *

EIM-84-129, p.9 - 18, 1984/00

no abstracts in English

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